COMPUTER SIMULATION OF POLYSILICON EMITTER TRANSISTORS

Abstract

In this paper, a one-dimensional model is proposed to analyse heavy doped emitters of transistors being contacted with polycrystalline silicon (polysilicon). This model is based on the Effective Recombination Velocity (ERV) approach. The effect of the polysilicon contact in Poly silicon Emitter Transistors (PETs) can be modelled as a reduced surface recombination velocity for minority carriers and the increased series emitter resistance for majority carriers. Computer simulation has been used to predict the performance of the transistor. It is pointed out that the interface between polysilicon and silicon affects the value of the current density rather than the polysilicon itself. The other physical and technological parameters, to be chosen around their reasonable values, are used as fitting parameters to simulate the real performance of the PET cited in the literature.