OPTICAL CHARACTERIZATION OF THE CARRIER DISTRIBUTION IN SILICON POWER DEVICES WITH DEFINED SPATIAL RESOLUTION
Abstract
Measured one-dimensional static recombination radiation intensity distributions of P+NN+ structures are compared to p. n products yielded from a mathematical model. It is shown that the modelled data under correction for spatial resolution of the apparatus are in good qualitative agreement with measured data even in highly doped emitter regions.
Keywords:
recombination radiation, carrier concentration. modelling, power diodeHow to Cite
Hátle, M., Vobecky, J. “OPTICAL CHARACTERIZATION OF THE CARRIER DISTRIBUTION IN SILICON POWER DEVICES WITH DEFINED SPATIAL RESOLUTION”, Periodica Polytechnica Electrical Engineering, 34(1), pp. 13–20, 1990.
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