ELECTRON TRAPS INVESTIGATION IN ION IMPLANTED MESFETS

Abstract

Capacitance and conductance Deep-Level Transient Spectroscopy has been performed in n - ion implanted MESFET channel layers prepared on semi-insulating Cr-doped LEC GaAs substrates together with the investigation of their electrical properties. Experi- mental results achieved by both methods have been compared and used for deep-level identification. Six significant electron traps have been detected. Important defect and re- combination parameters such as density profiles and energy level of electron traps, thermal emission rates and capture cross section were deduced from these measurements.