RESEARCH OF TUNNEL-OXIDE AND BULK-BARRIER NEW ACTIVE DEVICES

Abstract

A survey is given on the research activity and results concerning some new devices with thin (tunnel) oxide or bulk - barrier structure. This comprises experimental and theoretical works on the switching process on the MISS device. A new theory is given for the I-V characteristics of the MISS. Some new phenomena connected to the MISS are also reported. Beside the MISS, experimental results on the MIS emitter transistor (MISET) and on the tunnel- gateoxide MOS FET are dis- cussed. A general scheme for amplifying and negative-resistance devices is given and some new de- vices are suggested.