NUMERICAL MODELLING OF SEMICONDUCTOR STRUCTURES INCLUDING ELECTRON-HOLE SCATTERING AND RECOMBINATION RADIATION RECYCLING EFFECT

Authors

  • E. Velmre

Abstract

A charge carrier transport model is developed which allows in a phenomenologically more constant way to take into account the effects of electron-hole scattering on the mobilities of the charge carriers in a semiconductor. Also a mathematical model of charge carrier generation due to the photon reabsorption process in a direct gap semiconductor is given and some photon transport aspects are discussed.

Keywords:

electron-hole scattering, charge carrier mobility, direct gap semiconductor, recombination

How to Cite

Velmre, E. “NUMERICAL MODELLING OF SEMICONDUCTOR STRUCTURES INCLUDING ELECTRON-HOLE SCATTERING AND RECOMBINATION RADIATION RECYCLING EFFECT”, Periodica Polytechnica Electrical Engineering, 33(3), pp. 141–150, 1989.

Issue

Vol. 33 No. 3 (1989)

Section

Articles