SWITCHING PROCESSES IN THE METAL-INSULATOR-SEMICONDUCTOR THYRISTOR (MIST)

Abstract

The switching process in the MIST, having a metal-tunnel oxide-n layer-p layer structure, is discussed. The MIST is modelled as a two-active device structure, with a bipolar transistor and an amplifying M IS structure. The gate pulse startes the transient process of the bipolar transistor, the collector current of the transistor builds up the inversion charge of the MIS. The device switches in, if the inversion charge reaches its critical value. The delay time caused by the inversion charge is calculated and measured.