GOTTWALD, Péter; ÁMBRÓZY, András. Measurement of the dopant distribution in thin epitaxial si and GaAs structures. Periodica Polytechnica Electrical Engineering, [S. l.], v. 24, n. 1-2, p. 11–19, 1980. Disponível em: https://pp.bme.hu/ee/article/view/4791. Acesso em: 27 dec. 2024.