GROWTH OF InAs<I>_x</I>Sb_1-x LAYERS ON GaAs SUBSTRATES BY HOT WALL EPITAXY

Abstract

We have studied the structural and electrical characteristics of InAsSb ternary layers grown on GaAs (001) substrates by hot wall epitaxy (HWE) at arsenic (As) reservoir temperature in the range from 220 to 290 ^°C. The growth rate of the epilayer is found to be decreased with increasing As temperature. This is attributed to the abundance of group V molecules to the growth surface, which suppresses the mass transport of Indium (In) atoms. A dramatic change in the surface morphologies of the samples has been observed by scanning electron microscopy. X-ray diffraction studies indicate that the arsenic composition of the layer can be controlled by manipulating As temperature. Hall effect results of the samples show that the electron mobility of the layer decreases with increasing As temperature.