SPUTTER DEPTH PROFILING OF OPTICAL WAVEGUIDES USING SECONDARY ION MASS SPECTROMETRY

Abstract

The technique of sputter depth profiling by means of secondary ion mass spectrometry of samples with high resistivity is reviewed. As examples we discuss optical waveguides made in lithium niobate by titanium indiffusion and implantation and also yttrium iron garnet waveguides grown by liquid phase epitaxy on gadolinium gallium garnet. Depth profiling of these waveguide structures has been performed and the necessary precautions to prevent charging by the primary ion beam are discussed. In some cases, coating with a metallic layer is adequate, but a more universal method is charge neutralization by an additional electron beam.