MATERIALS FOR LIGHT DETECTORS IN THE RESEARCH INSTITUTE FOR TECHNICAL PHYSICS

Abstract

Optoelectronics, especially the optical telecommunication needs high quality photode- tectors with low noise and high sensitivity. Beyond 1 μm in the infrared region important for both selective spectroscopy and optical communication systems Si devices cannot be applied. As a possible solution of this problem new materials as ternary and quaternary antimonides were applied in heteroepitaxial form for developing new, wide band detectors. Using GaAs based superlattices another possibility exists, therefore, quantum-well struc- tures of GaAs/GaAlAs were developed for photodetector development.