Numerical Investigation of Enhanced Efficiency in CIGS Solar Cells with 3C-SiC and PEDOT:PSS Integration

Abstract

Copper indium gallium selenide (CIGS)-based thin-film solar cells continue to lead advancements in the efficiency of thin-film technologies. In this study, we propose cubic silicon carbide (3C-SiC) as a viable alternative to cadmium sulfide (CdS) for use as a buffer layer in CIGS solar cells. 3C-SiC offers superior transparency, higher electron mobility, and non-toxicity, making it a promising candidate for enhancing device efficiency. In this paper, we present a computational analysis of a thin-film solar cell utilizing a ZnO/3C-SiC/CIGS/ poly(3,4-ethylenedioxythiophene) (PEDOT): polystyrene sulfonate (PSS)/Mo heterostructure with PEDOT:PSS as the back surface field (BSF) layer. Simulations conducted using SCAPS-1D software demonstrate impressive photoconversion efficiencies, achieving an ideal efficiency (η) of 32.83%, an open circuit voltage (V_OC) of 0.86 V, a short circuit current density (J_SC) of 56.40 mA cm⁻², and a fill factor (FF) of 80.79%. The study systematically examines the influence of key parameters, including CIGS absorber thickness, PEDOT:PSS thickness, 3C-SiC thickness, and temperature, demonstrating a strong correlation with previous experimental results. These findings offer valuable insights for enhancing the performance of CIGS solar cells and highlight promising avenues for future advancements in thin-film photovoltaics.