Prototype MEMS Capacitive Pressure Sensor Design and Manufacturing

Abstract

This paper is intended to describe the design and manufacturing aspects of a simple micromachined capacitive pressure sensor working in the pressure range of 0-1000 mbar. 500 µm thick Borofloat^® 33 glass and silicon wafers were used as substrates. The basic transducer structure consists of a rectangular silicon membrane as deformable electrode and a fix aluminum electrode formed on the glass surface. In order to determine the exact geometry of the silicon electrode structure numerical models and simulations were applied. The thin silicon membrane was fabricated by Si bulk micromachining, i.e. anisotropic alkaline etching with electrochemical etch-stop. The two wafers were bonded together at low temperature by anodic bonding. After bonding and dicing the wafers the pressure sensors were characterized mechanically and functionally also. Our results demonstrate the functional behavior of the manufactured sensor structures and provide excellent verification of the preliminary expectations based on theoretical calculations and electro-mechanical simulations.